| 申请日期 | 2025-07-11 | 申请号 | JP2002516822 |
| 公开（公告）号 | JP5027980B2 | 公开（公告）日 | 2012-09-19 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | ESSILOR INTERNATIONAL COMPAGNIE GENERALE D9 OPTIQUE | ||
| 简介 | The invention concerns a method comprising evaporating silicon and/or SiOx, wherein said evaporating is further defined as occurring in the presenceof oxygen if silicon or SiOx with x less than two is being evaporated, to form a silicon oxide film at the surface of a substrate and in bombarding said silicon film, while it is being formed, with a beam of positive ions derived from both a polyfluorocarbon compound and a rare gas. The invention is useful for producing low-index antiglare films. | ||
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