| 简介 |
PROBLEM TO BE SOLVED : To improve quality and reliability by preventing joint defects of an electrode while suppressing a change in resistance under a high temperature environment. ŽSOLUTION : A thin-film thermistor comprises : a silicon substrate 3, where an SiO2layer 2 is formed on the surface; a thermistor thin film 4 of which the pattern is formed on the upper surface of the SiO2layer 2; a junction layer 5 formed of a metal material except a rare metal, where the pattern of the junction layer 5 is formed on the upper surface of the SiO2layer 2; and the electrode 6 made of a rare metal, where the pattern of the electrode 6 is formed on the junction layer 5. Inside the thermistor thin film 4, there is a thin-film non-formation region 4a, where the thermistor thin film 4 is not formed. The junction layer 5 and the electrode 6 are buried in the thin-film non-formation region 4a and the side is joined to the inner surface of the thermistor thin film 4. One portion of the junction layer 5 and the electrode 6 in the thin-film non-formation region 4a is removed to adjust the value of resistance. ŽCOPYRIGHT : (C)2009, JPO&INPIT Ž |
客服热线：
手机版
二维码
