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MAGNETORESISTANCE ELEMENT AND NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE USING SAME MAGNETORESISTANCE 发明申请

2023-12-09 1830 1190K 0

专利信息

申请日期 2026-04-22 申请号 US13395437
公开(公告)号 US20120230089A1 公开(公告)日 2012-09-13
公开国别 US 申请人省市代码 全国
申请人 Michiya Yamada; Yasushi Ogimoto
简介 A magnetoresistance element is disclosed. The magnetoresistance element includes a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic body has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface. A heat assist layer that heats the second magnetic body with a heat generated based on a current flowing through the magnetic tunnel junction portion is further provided.


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