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VACUUM TREATMENT APPARATUS 发明申请

2023-12-13 2050 87K 0

专利信息

申请日期 2025-07-18 申请号 JP2011025449
公开(公告)号 JP2012162781A 公开(公告)日 2012-08-30
公开国别 JP 申请人省市代码 全国
申请人 ULVAC CORP
简介 PROBLEM TO BE SOLVED : To provide a compact vacuum treatment apparatus which forms a barrier layer and an embedded layer efficiently with a small number of treating chambers. SOLUTION : In the barrier layer, a target formed of Ti and a rare gas are introduced, then a plasma atmosphere is formed and a first metal layer is formed by sputtering the target, and a gas containing an oxygen gas and a nitrogen gas is introduced into a treating chamber to subject the surface of the first metal layer and the surface of the target to oxynitriding treatment. A second metal layer is formed on the surface subjected to the oxynitriding treatment by further sputtering the target. On the other hand, in the embedded layer, a target formed of an Al-containing metal is used, pressure is adjusted to predetermined pressure so that sputtered particles collide with charged particles in plasma, and also bias power applied at first is stopped during film deposition and pressure in the treating chamber is also lowered, and also an object to be treated W is heated by a heating means to a temperature at which metal particles stuck and deposited on the surface of the object to be treated flow. COPYRIGHT : (C)2012, JPO&INPIT


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