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PREPARATION OF DOPED GARNET STRUCTURE SINGLE CRYSTALS WITH DIAMETERS OF UP TO 500 MM 发明申请

2023-05-27 1440 1165K 0

专利信息

申请日期 2025-06-27 申请号 WOCZ12000006
公开(公告)号 WO2012110009A1 公开(公告)日 2012-08-23
公开国别 WO 申请人省市代码 全国
申请人 CRYTUR SPOL S R O; HOUŽVIČKA Jindřich; BARTOŠ Karel
简介 Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout and homogenized for a period of at least one hour. The single crystal seed has the minimum dimensions of 8 x 8 mm and length of 100 mm. The crystal growth rate and broadening of the crystal cone are maintained uniform at an angle of at least 60o from the crystal axis up to a diameter of at least 80% of the crucible diameter which is at least 100 mm. Thereafter the diameter thereof continues to be maintained by temperature regulation at the crystal/melt interface and by the crystal pulling and rotation speeds. The completion of the process occurs by separating the crystal from the melt while the crystal continues to be positioned inside the crucible in the zone wherein it was grown, and wherein final tempering of the crystal also takes place.


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