| 简介 |
To provide an oxide sintered body that can form an amorphous semiconductor thin film even when an In content is increased, and a sputtering target.SOLUTION : The present invention provides an oxide sintered body in which an atomic ratio of In elements, Sn elements, Zn elements, and heavy rare earth elements (HREEs : described as X) satisfy the following formulae (1) to (4), a bixbyite structure represented by InOis the main component, and a pyrochlore structure is also included. 0.50≤In/(In+Sn+Zn)≤0.85 (1), 0.10≤Sn/(In+Sn+Zn)≤0.45 (2), 0.05≤Zn/(In+Sn+Zn)≤0.25 (3), and 0.05≤X/(In+Sn+Zn+X)≤0.25 (4), where, the heavy rare earth elements denote at least one element selected from Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.SELECTED DRAWING : None |
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