| 简介 |
To provide an oxide sintered body that can form an amorphous oxide semiconductor thin film that can ensure strength and has excellent TFT performance even when light rare earth elements are added, and a sputtering target.SOLUTION : The present invention provides an oxide sintered body in which an atomic ratio of In elements, Zn elements, Sn elements, and light rare earth elements (LREEs : described as X) satisfy the following formulae (1) to (4), and a bixbyite structure represented by InOis the main component. 0.55≤In/(In+Sn+Zn)≤0.90 (1), 0.05≤Sn/(In+Sn+Zn)≤0.25 (2), 0.05≤Zn/(In+Sn+Zn)≤0.20 (3), and 0.05≤X/(In+Sn+Zn+X)≤0.25 (4), where, the light rare earth elements denote at least one element selected from La, Nd, Sm, and Eu.SELECTED DRAWING : None |
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