| 简介 |
To provide an oxide sintered body that can form an oxide semiconductor thin film having excellent properties when used for a thin film transistor, and can suppress cracking during film formation and generation of nodules.SOLUTION : An oxide sintered body contains Ga, Sn, In, and heavy rare earth elements, where Ga2+xIn6-xSn2O16(0≤x≤1) is the main component, provided that, the heavy rare earth elements denote at least one element selected from Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.SELECTED DRAWING : None |
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