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Method of forming a precursor solution for metal organic deposition and method of forming supercondu 发明授权

2023-04-29 1620 1722K 0

专利信息

申请日期 2025-06-25 申请号 US12506189
公开(公告)号 US8236733B2 公开(公告)日 2012-08-07
公开国别 US 申请人省市代码 全国
申请人 Sang Im Yoo; Seung Hyun Moon; Geo Myung Shin
简介 A method for forming a precursor solution for metal organic deposition includes dissolving an additive-free first precursor composed of a rare earth element, a second precursor comprising barium, and a third precursor composed of copper into an acid to form a compound solution; dissolving the compound solution into a solvent to form a pre-precursor solution; and evaporating the solvent from the pre-precursor solution to form a precursor solution having an increased viscosity; wherein at least one of the first precursor, the second precursor, and the third precursor is dissolved into a fluorine-free acid. A method for forming a superconducting thick film from the above precursor solution includes forming a thick film by a one-time coating of the precursor solution having an increased viscosity onto a biaxially-textured base followed by heat treating to form the superconducting thick film having a thickness of about 0.2 μm or more and having no cracking.


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