| 简介 |
PROBLEM TO BE SOLVED : To provide a method for forming a barrier layer, by which a barrier layer exhibiting sufficient barrier performance can be formed with satisfactory productivity even when the barrier layer is interposed between conductive layers comprising dissimilar metals.
SOLUTION : The method for forming a barrier layer BM includes the steps of : arranging a work piece W with one conductive layer CL1 and a target 2, for example made of Ti, inside a vacuum processing chamber 1a, introducing rare gas in the vacuum processing chamber to form a plasma atmosphere, and sputtering the target to form a first metal layer on a surface of the one conductive layer; introducing gas containing oxygen gas and nitrogen gas in the vacuum processing chamber to form a plasma atmosphere and oxynitriding a surface of the first metal layer while also exposing the target to the plasma atmosphere so that a surface of the target is oxynitrided; and further introducing the rare gas in the vacuum processing chamber to form a plasma atmosphere and sputtering the target to form a second metal layer on the oxynitrided surface.
COPYRIGHT : (C)2012, JPO&INPIT |
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