| 申请日期 | 2025-07-09 | 申请号 | US13391949 |
| 公开（公告）号 | US20120175361A1 | 公开（公告）日 | 2012-07-12 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | INO KENTARO; SHIMADA TAKESHI; KIDA TOSHIKI | ||
| 简介 | There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, which exhibits an excellent jump characteristic while reducing room temperature resistivity and which also reduces room temperature resistivity and exhibits small change with time.
A semiconductor ceramic composition which is represented by a composition formula of [(Biθ—Naδ)x(Ba1-yRy)1-x]TiO3 (where R is at least one kind of rare earth elements), in which x, y, θ and δ satisfy 0 | ||
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