| 简介 |
PROBLEM TO BE SOLVED : To provide a silicon target for sputtering film formation, achieving formation of a high-quality silicon-containing thin film by suppressing dust generation during sputtering film formation.
SOLUTION : An n-type silicon target material 10 and a metallic backing plate 20 are bonded to each other via a bonding layer 40. A conductive layer 30 made of a material having a work function smaller than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on a side of the bonding layer 40. That is, the silicon target material 10 is bonded to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. When silicon is a single crystal, a work function of n-type silicon is generally 4.05 eV, and therefore a work function of the material of the conductive layer 30 needs to be smaller than 4.05 eV. A material corresponding to the material of the conductive layer 30 contains one of a lanthanoid element, a rare-earth element, an alkali metal element, and an alkali-earth metal element as a main component.
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