| 简介 |
A light emitting device structure, wherein the emitter layer structure comprises one or more device wells defined by thick field oxide regions, and a method of fabrication thereof are provided. Preferably, by defining device well regions after depositing the emitter layer structure, emitter layer structures with reduced topography may be provided, facilitating processing and improving layer to layer uniformity. The method is particularly applicable to multilayer emitter layer structures, e.g. comprising a layer stack of active layer/drift layer pairs. Preferably, active layers comprise a rare earth oxide, or rare earth doped dielectric such as silicon dioxide, silicon nitride, or silicon oxynitride, and respective drift layers comprise a suitable dielectric, preferably silicon dioxide, of an appropriate thickness to control excitation energy. Pixellated light emitting structures, or large area, high brightness emitter layer structures, e.g. for solid-state lighting applications, may therefore be provided with improved process flexibility and reliability. |
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