| 简介 |
PROBLEM TO BE SOLVED : To improve the performance of a semiconductor device.
SOLUTION : An interface layer 3 for a gate insulating film, an Al-containing film 4, an Hf-containing film 5, an Al-containing film 6, and a mask layer 7 are formed on a primary surface of a semiconductor substrate 1, and then the mask layer 7 and the Al-containing film 6 in an nMIS formation region 1A, which is an n-channel type MISFET formation schedule region, are selectively removed. Then, a rare-earth-containing film 8 is formed on the Hf-containing film 5 in the nMIS formation region 1A and the mask layer 7 in a pMIS formation region 1B, which is a p-channel type MISFET formation schedule region, and then by conducting heat treatment, the Hf-containing film 5 in the nMIS formation region 1A is reacted with the rare-earth-containing film 8, and the Hf-containing film 5 in the pMIS formation region 1B is reacted with the Al-containing films 4 and 6. After that, the unreacted rare-earth-containing film 8 and the mask layer 7 are removed, and then a metal gate electrode is formed.
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