| 简介 |
Optoelectronic devices have a photoactive region containing semiconductor material doped with ions of a rare earth element. Characteristic transitions associated with internal energy states of the rare earth dopant ions are modified by direct interaction of those states with an energy state in the semiconductor band structure. Eu3+ and Yb3+ doped silicon LEDs and photodetectors are described. The LEDs are emissive of radiation in the wavelength range 1300nm to 1600nm, important in optical communications. |
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