| 简介 |
The present disclosure relates to semiconductor structures and, more particularly, to fin structures with single diffusion break facet improvement using an epitaxial insulator and methods of manufacture. The structure includes : a plurality of fin structures; an insulator material filling a cut between adjacent fin structures of the plurality of fin structures; a metal material (e.g., rare earth oxide or SrTiO3) at least partially lining the cut; and an epitaxial source region or epitaxial drain region in at least one of the plurality of fin structures and adjacent to the metal material. |
客服热线：
手机版
二维码
