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The method of manufacturing the supermagnetostrictive 发明授权

2023-10-12 3660 52K 0

专利信息

申请日期 2026-03-16 申请号 JP2001137294
公开(公告)号 JP4919310B2 公开(公告)日 2012-04-18
公开国别 JP 申请人省市代码 全国
申请人 FDK CORP; NAGANO PREFECTURE; WAKIWAKA HIROYUKI
简介 PROBLEM TO BE SOLVED : To provide a supermagnetostriction thin film element, which shows large magnetostriction characteristics even to a small magnetic field, and to provide a method of manufacturing the supermagnetostriction thin film element which can develop the supermagnetostriction characteristics in a simple manufacturing process. SOLUTION : An supermagnetostriction thin film element having a substrate and a thin film is formed on the substrate and consists of a supermagnetostriction material. The thin film consists of a vapor-grown RT (The R is a Y-containing rare-earth element and the T is a transition metal containing Fe as its main component.) system of the supermagnetostriction material. When the percentage of the R at the point of intersection of the incongruent melting temperature of an RT2 Laves phase and the liquid phase line of a Laves phase on the state diagram of the supermagnetostriction material is assumed to be x at%, the percentage of the R is set at x±3 at%. It is desirable that the R is Tb, the T is Fe and the percentage of the Tb is set at 37 to 43 at%. Moreover, it is desirable that the internal stress of the thin film is set lower than 100 MPa. For reduction of the internal stress, a heat treatment is effective.


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