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HIGHLY HEAT CONDUCTIVE SILICON NITRIDE SINTERED BODY AND SILICON NITRIDE STRUCTURAL MEMBER 发明授权

2023-08-10 3970 497K 0

专利信息

申请日期 2025-08-16 申请号 EP05741367
公开(公告)号 EP1666434B1 公开(公告)日 2012-04-11
公开国别 EP 申请人省市代码 全国
申请人 Kabushiki Kaisha Toshiba; Toshiba Materials Co Ltd
简介 A silicon nitride sintered body exhibiting a high heat conductivity, the silicon nitride sintered body includes a rare earth element in an amount of 2 to 17.5 mass % in terms of the oxide thereof, Fe in an amount of 0.07 to 0.5 mass % in terms of the oxide thereof, Ca in an amount of 0.07 to 0.5 mass % in terms of the oxide thereof, Al in an amount of 0.1 to 0.6 mass % in terms of the oxide thereof, Mg in an amount of 0.3 to 4 mass % in terms of the oxide thereof, and Hf in an amount not larger than 5 mass % (including 0 mass %) in terms of the oxide thereof.


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