| 简介 |
PROBLEM TO BE SOLVED : To provide a manufacturing method of a semiconductor device having excellent electric characteristics.
SOLUTION : A manufacturing method of a semiconductor device includes : forming a rare earth metal silicide film and an amorphous silicon film on an electrode layer; and performing crystallization of the amorphous silicon film by heating the rare earth metal silicide film and the amorphous silicon film with microwave so that it has crystal orientation according to the crystal structure of the rare earth metal silicide film.
COPYRIGHT : (C)2012, JPO&INPIT |
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