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SEMICONDUCTOR JUNCTION ELEMENT, SEMICONDUCTOR DEVICE USING SAME, AND METHOD FOR MANUFACTURING SEMI 发明申请

2023-07-12 3120 545K 0

专利信息

申请日期 2026-04-26 申请号 WOJP11070007
公开(公告)号 WO2012039265A1 公开(公告)日 2012-03-29
公开国别 WO 申请人省市代码 全国
申请人 HITACHI LTD; FUJIEDA Tadashi; NAITO Takashi; AOYAGI Takuya; YAMAMOTO Hiroki; MIYATA Motoyuki
简介 For the purpose of providing a semiconductor junction element, which is configured of a semiconductor glass of an oxide not using a toxic element or a rare metal element, and various semiconductor devices using the semiconductor junction element, a semiconductor junction element of the present invention is obtained by joining semiconductor glasses that contain vanadium oxide and have different polarities. Another semiconductor junction element of the present invention is obtained by joining a semiconductor glass that contains vanadium oxide and an elemental semiconductor or compound semiconductor that has a polarity different from that of the semiconductor glass. Still another semiconductor junction element of the present invention is obtained by joining a metal and a semiconductor glass that contains vanadium oxide.


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