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OXIDE SINTERED COMPACT AND SPUTTERING TARGET 发明申请

2023-03-04 4480 1199K 0

专利信息

申请日期 2025-07-12 申请号 WOJP11071195
公开(公告)号 WO2012039351A1 公开(公告)日 2012-03-29
公开国别 WO 申请人省市代码 全国
申请人 KOBELCO RESEARCH INSTITUTE INC; GOTO Hiroshi; IWASAKI Yuki; NAKAI Junichi; YONEDA Yoichiro; EHIRA Masaya
简介 Provided is an oxide sintered compact that has both high conductivity and relative density and is ideal for the forming of an oxide semiconductor film for a display device. The oxide sintered compact of the present invention is obtained by mixing and sintering, each in powder form, zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group comprising Al, Hf, Ta, Ti, Nb, Mg, Ga and rare earth elements, wherein, when the oxide sintered compact is subjected to X-ray diffraction, a Zn2SnO4 compound is detected but spinel compounds in the form of a ZnMxOy phase or an MxO­y phase (where x and y are arbitrary integers) are not detected.


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