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HIGH PURITY Ta SHEET AND MANUFACTURING METHOD OF THE SAME 发明授权

2023-10-18 4900 477K 0

专利信息

申请日期 2026-04-01 申请号 KR1020090062635
公开(公告)号 KR101133029B1 公开(公告)日 2012-03-28
公开国别 KR 申请人省市代码 全国
申请人 Korea Academy of Industrial Thechnology; KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
简介 PURPOSE : A high-purity tantalum sheet and a manufacturing method thereof are provided to reduce the standard deviation of crystal grains by identifying re-crystallization starting times of the crystal grains. CONSTITUTION : A manufacturing method of a high-purity tantalum sheet is as follows. Tantalum ingot or billet is cold-forged and is re-crystallized by annealing. A recovery annealing process is performed with a less than re-crystallization temperature in order to eliminate residual stress. The casted tantalum ingot or billet is finally cold-rolled and is re-crystallized by annealing. The recovery annealing is performed for 20 to 40 minutes.


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