| 简介 |
PROBLEM TO BE SOLVED : To provide a manufacturing method of an SOI wafer including a p-type SOI layer with low resistivity, in which the decrease in boron concentration of the SOI layer due to the segregation of boron at the time of forming a thermal oxide film in a bond wafer is suppressed and the low resistivity of the SOI layer is maintained by suppressing the external diffusion of p-type dopant or suction by oxygen after separation.
SOLUTION : A manufacturing method of a bonded SOI wafer comprises : forming an ion injection layer in a bond wafer by ion injection of at least one kind of gas ion selected from hydrogen and rare gas from a surface of the bond wafer via a thermal oxide film; bonding the surface of the bond wafer to which the ion injection has been performed to a surface of a base wafer with the thermal oxide film interposed therebetween; and separating the bond wafer at the ion injection layer. The bond wafer for which the thermal oxide film has been provided is heated in a non-reductive atmosphere before the ion injection.
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