| 简介 |
A p-type semiconductor layer (1) containing a solid solution of NiO and ZnO as a main component and an n-type semiconductor layer (2) containing ZnO as a main component are joined together, and the p-type semiconductor layer (1) contains a rare-earth element (R). The content of the rare-earth element R is preferably 0.001 to 1 mol in 100 mol of the main component. Examples of the rare-earth element that can be used include Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb. In addition, an internal electrode (4) preferably contains, as a main component, a composite oxide containing the rare-earth element (R) and Ni. The photoelectric conversion efficiency can thus be improved and ultraviolet light can be directly detected as a photocurrent without providing an external power supply circuit. |
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