| 申请日期 | 2025-07-05 | 申请号 | US12258850 |
| 公开（公告）号 | US8138060B2 | 公开（公告）日 | 2012-03-20 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Toshihiko Tsukatani; Takao Maeda; Junichi Nakayama; Hirofumi Kawazoe; Masaru Konya; Noriaki Hamaya; Hajime Nakano | ||
| 简介 | A wafer has a rare earth oxide layer disposed, typically sprayed, on a substrate. It is useful as a dummy wafer in a plasma etching or deposition system. | ||
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