| 简介 |
PROBLEM TO BE SOLVED : To prevent residual of hydrogen intruding into a silicon-containing film by performing selective oxidation of the silicon-containing film while preventing oxidation of a metal-containing film.
SOLUTION : A method of manufacturing a semiconductor device comprises the steps of : performing plasma discharge and maintaining for a predetermined time with a hydrogen-containing gas and an oxygen-containing gas supplied to a processing chamber while heating a substrate at a first temperature; and supplying a rare gas to the processing chamber and maintaining the inside of the processing chamber under a rare gas atmosphere for a predetermined time while heating the substrate at a second temperature higher than the first temperature.
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