| 简介 |
PROBLEM TO BE SOLVED : To provide a quartz glass cap body for a reactor for thermally treating a semiconductor, with which the semiconductor is thermally treated without contamination and etching treatment or oxide film forming treatment can be suitably carried out and to provide a method for producing the cap body. SOLUTION : The quartz glass cap body for a reactor for thermally treating a semiconductor has many pores for injecting heated gas and mirror finished surfaces. The pore diameter of the cap body is in the range of 0.1 to 2 mm, and the number of the pores per unit area is not less than 0.1/cm2. The center line average surface roughness of the surface of the quartz glass cap body is not more than 0.1 &mu m, and the quartz glass cap body contains residual oxidized rare earth elements in a concentration of <=1 ppm. |
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