| 简介 |
PROBLEM TO BE SOLVED : To provide a technique capable of preventing increase in threshold voltage of an n-channel type MISFET and a p-channel type MISFET in a semiconductor device comprising a CMISFET having a high-dielectric gate insulating film and a metal gate electrode.
SOLUTION : When a rare earth element or aluminum is introduced into an Hf-containing insulating film 5 that is a high-dielectric gate insulating film for the purpose of adjusting the threshold voltage of CMISFET, a threshold adjusting layer 8b made of a lanthanum film containing almost no oxygen and a threshold adjusting layer 8a made of an aluminum film containing almost no oxygen are formed on the Hf-containing insulating film 5 in an nMIS forming region 1B and a pMIS forming region 1A respectively. This configuration prevents oxygen from being diffused into the Hf-containing insulating film 5 and the principal surface of a semiconductor substrate 1 from the threshold adjusting layer 8a and the threshold adjusting layer 8b.
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