| 简介 |
PROBLEM TO BE SOLVED : To provide a manufacturing method of a semiconductor device for reducing an etching residue of a high-k film containing rare earth metals.
SOLUTION : A manufacturing method of a semiconductor device has steps of : forming an insulation film 4 on a semiconductor substrate 1; forming oxide films 7 and 12 containing rare earth elements on the insulation film 4; and etching the oxide films 7 and 12 containing rare earth elements with a chemical solution containing hydrofluoric acid, hydrochloric acid, and sulfuric acid. By this manufacturing method, the oxide films 7 and 12 containing rare earth elements are excellently etched.
COPYRIGHT : (C)2012, JPO&INPIT |
客服热线：
手机版
二维码
