| 简介 |
There is provided a technology capable of preventing the increase in threshold voltages of n channel type MISFETs and p channel type MISFETs in a semiconductor device including CMISFETs having high dielectric constant gate insulation films and metal gate electrodes. When a rare earth element or aluminum is introduced into a Hf-containing insulation film which is a high dielectric constant gate insulation film for the purpose of adjusting the threshold value of the CMISFET, a threshold adjustment layer including a lanthanum film scarcely containing oxygen, and a threshold adjustment layer including an aluminum film scarcely containing oxygen are formed over the Hf-containing insulation film in an nMIS formation region and a pMIS formation region, respectively. This prevents oxygen from being diffused from the threshold adjustment layers into the Hf-containing insulation film and the main surface of a semiconductor substrate. |
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