| 简介 |
PROBLEM TO BE SOLVED : To allow formation of a single crystal film having a larger area, the film being a single crystal film of a copper oxide high-temperature superconductor RE2CuO4 (RE is a rare earth element) having a minimum number of constitutive elements whose film thickness is accurately controlled.
SOLUTION : A precursor thin film 102 containing a rare earth element RE, copper, and oxygen is formed by vapor deposition on a single crystal substrate 101 which is composed of a single crystal in which at least one of the in-plane lattice constant and the interplanar lattice constant is in agreement with those of the compound RE2CuO4 which is the object of formation within the range of ±1%. The composition ratio of the rare earth element RE to copper in the precursor thin film 102 formed is made to stoichiometry of the chemical formula RE2CuO4 by controlling the feed rate of the rare earth element RE and copper in vapor deposition. Then, the composition of oxygen is also made to agree with stoichiometry by solid phase epitaxy in a high temperature and low oxygen partial pressure atmosphere and low-temperature reduction to produce a single crystal thin film having superconductivity.
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