| 简介 |
PROBLEM TO BE SOLVED : To provide an oxide for a thin film transistor semiconductor layer that is excellent in a switching characteristic of a thin film transistor and in which a favorable characteristic can be stably obtained after formation of a protective film and application of stress even in a region where concentration of ZnO is particularly high.
SOLUTION : An oxide for a semiconductor layer of a thin film transistor according to the present invention is an oxide used for a semiconductor layer of a thin film transistor. The oxide includes Zn, Sn, and at least one element selected from the group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and a rare earth element.
COPYRIGHT : (C)2012, JPO&INPIT |
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