| 简介 |
The present invention provides an aluminum nitride substrate and an aluminum nitride circuit board having excellent insulation characteristics and heat dissipation properties and having high strength, a semiconductor apparatus, and a method for manufacturing an aluminum nitride substrate.
An aluminum nitride substrate according to the present invention is an aluminum nitride substrate having aluminum nitride as a main component and comprising a polycrystal containing a plurality of aluminum nitride grains, and complex oxide grains being present at grain boundaries of the aluminum nitride grains and including a rare earth element and aluminum, wherein the aluminum nitride grains have a maximum grain size of 10 μm or less, the complex oxide grains have a maximum grain size smaller than the maximum grain size of the aluminum nitride grains, the number of the complex oxide grains having a grain size of 1 μm or more being present in a field of view of 100 μm×100 μm of a surface of the aluminum nitride substrate observed is 40 or more, the aluminum nitride substrate has a bending strength of 400 MPa or more in an unpolished state after firing, and the aluminum nitride substrate has a volume resistivity of 1012 Ωm or more. |
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