| 简介 |
PROBLEM TO BE SOLVED : To provide a plasma etching method capable of etching a silicon layer in a laminated film while using a resist as a mask, while ensuring a sufficient selection ratio to a mask and a sufficient etching rate. ŽSOLUTION : In a body to be treated; at least a silicon oxide film, a silicon nitride film, and a resist film are laminated and formed on a silicon layer mainly comprising silicon and layers upper than the silicon layer. The silicon nitride film, the silicon oxide film, and the silicon layer are etched collectively while using the resist film as the mask by using a plasma generated from a treating gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas, and an O2gas to the body to be treated in a treating chamber for plasma treatment equipment 100. ŽCOPYRIGHT : (C)2008, JPO&INPIT Ž |
客服热线：
手机版
二维码
