| 简介 |
PROBLEM TO BE SOLVED : To provide a storage device which can restrain generation of dispersion in resistance value of a storage element constituting a memory cell, and can stably record information and read the recorded information. SOLUTION : A storage layer 2 constituted of an oxide of a rare earth element is arranged between two electrodes. A storage element provided with a layer 3 comprising any metallic element selected from Cu, Ag, Zn is provided in contact with the storage layer 2. A conductive path 31 comprising metallic elements (Cu, Ag, Zn) is formed in a local region inside the storage layer 2 of the storage element by applying a voltage between two electrodes, thus constituting a storage device wherein the crystallographic structure of the conductive path 31 is amorphous. COPYRIGHT : (C)2008, JPO&INPIT |
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