| 简介 |
PROBLEM TO BE SOLVED : To improve the performance of a semiconductor device.
SOLUTION : An element isolation region 13 is composed of a silicon oxide film embedded in a groove 11 and its upper portion is protruded from a semiconductor substrate 1. A sidewall insulating film SW1 composed of silicon nitride or silicon oxynitride is formed on a sidewall of the element isolation region 13 in the protruded portion from the semiconductor substrate 1. A gate insulating film of an MISFET is composed of an Hf-containing insulating film 5 containing hafnium, oxygen, and a chemical element for lowering a threshold value as main components. A gate electrode GE, a metal gate electrode, is extended over an active region 14, the sidewall insulating film SW1, and the element isolation region 13. The chemical element for lowering a threshold value is a rare earth or Mg for an n-channel type MISFET, and Al, Ti, or Ta for a p-channel type MISFET.
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