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Yttrium oxide material, member for use in semiconductor manufacturing apparatus, and method for pr 检索报告

2023-02-10 4250 117K 0

专利信息

申请日期 2026-03-11 申请号 EP09250397
公开(公告)号 EP2090557A3 公开(公告)日 2012-02-01
公开国别 EP 申请人省市代码 全国
申请人 NGK Insulators Ltd
简介 A substrate of an electrostatic chuck, which is a member for use in a semiconductor manufacturing apparatus, is formed of an yttrium oxide based material that contains yttrium oxide (Y2O3), silicon carbide (SiC), and a compound that contains a rare-earth element (RE), Si, O, and N. The yttrium oxide based material contains RE8Si4N4O14 as a compound that contains a rare-earth element (RE), Si, O, and N, wherein RE may be La or Y. Y8Si4N4O14 is produced during a sintering step of a raw material that contains the main component Y2O3 and an accessory component Si3N4. Y8Si4M4O14 and SiC in the yttrium oxide based material improve mechanical strength and volume resistivity.


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