申请日期 | 2025-09-18 | 申请号 | US11873387 |
公开(公告)号 | US8106381B2 | 公开(公告)日 | 2012-01-31 |
公开国别 | US | 申请人省市代码 | 全国 |
申请人 | Petar B Atanackovic | ||
简介 | The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable heteroepitaxy of different semiconductor materials of different orientations. |
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