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PHOSPHOR FOR INORGANIC EL DEVICE AND METHOD OF MANUFACTURING THE SAME 发明申请

2023-04-18 4320 182K 0

专利信息

申请日期 2025-09-14 申请号 JP2010145749
公开(公告)号 JP2012007114A 公开(公告)日 2012-01-12
公开国别 JP 申请人省市代码 全国
申请人 TSUTSUI OSAMU
简介 PROBLEM TO BE SOLVED : To provide a phosphor working as a distributed inorganic EL (Electro-Luminescence) light source that requires a lower driving voltage and has higher energy utilization efficiency than those of a conventional system phosphor. SOLUTION : Material powder constituting mixed oxide of a trivalent element and a pentavalent element is mixed with a rare earth activator for performing localized light emission, an oxide-based phosphor particle is produced by sintering or melting this mixture, a thin-film layer composed of a high-concentration n-type semiconductor in which a donor element of a tetravalent element is substituted for 1% or more of the trivalent element constituting a mother crystal of the phosphor is disposed on the surface of the phosphor particle, metal as a supply source of an electron and positive hole (hole) is distributed on the surface of the thin-film layer, and a material that has an ionization potential value smaller than the value (5.65 eV) of work function of Pt (platinum) as a mother crystal material of the phosphor and a band gap value of 3.5 eV or higher is selected. COPYRIGHT : (C)2012, JPO&INPIT


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