客服热线:18202992950

Single crystal for scintillator material and manufacturing method 发明授权

2023-07-25 4530 103K 0

专利信息

申请日期 2025-06-28 申请号 JP2006049123
公开(公告)号 JP4851810B2 公开(公告)日 2012-01-11
公开国别 JP 申请人省市代码 全国
申请人 MITSUI MINING SMELTING CO
简介 The present invention aims to obtain a novel single crystal material for scintillators by suppressing phase transition during the cooling and solidification process from the melting point in the production of a rare earth borate mainly containing Lu. Specifically, in a method for producing a single crystal material for scintillators wherein a mixture containing an Lu raw material and a boron oxygen raw material is melted and then cooled and solidified, the single crystal material for scintillators is obtained, while suppressing phase transition of a crystal material by adding an element raw material selected from the group consisting of Sc, Ga and In. By adding Sc or the like into a rare earth borate mainly containing Lu, phase transition can be suppressed while maintaining the radiation absorbing ability and the density at high levels.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4