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Semiconductor ceramic material 发明授权

2023-08-23 4520 423K 0

专利信息

申请日期 2025-07-01 申请号 US12636372
公开(公告)号 US8093170B2 公开(公告)日 2012-01-10
公开国别 US 申请人省市代码 全国
申请人 Hayato Katsu
简介 A semiconductor ceramic material which contains no Pb and has a high Curie point, low resistivity, and PTC characteristics is represented by the formula ABO3 wherein A includes Ba, Ca, an alkali metal element, Bi, and a rare-earth element, and B includes Ti. The semiconductor ceramic material contains 5 to 20 molar parts and preferably 12.5 to 17.5 molar parts of Ca per 100 molar parts of Ti. The ratio of the content of the alkali metal element to the sum of the content of the bismuth plus the content of the rare earth element, is preferably from 1.00 to 1.06. The semiconductor ceramic material preferably further contains 0.01 to 0.2 molar parts of Mn per 100 molar parts of Ti.


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