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SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 发明申请

2023-02-26 1980 30K 0

专利信息

申请日期 2025-06-25 申请号 JP2010136454
公开(公告)号 JP2012001381A 公开(公告)日 2012-01-05
公开国别 JP 申请人省市代码 全国
申请人 SHINETSU CHEMICAL CO
简介 PROBLEM TO BE SOLVED : To provide a single crystal substrate that has high quality essential to growing a bismuth-substituted rare earth iron garnet single crystal by liquid-phase epitaxial growth, has lattice constant and thermal expansion coefficient values close to those of a bismuth-substituted rare earth iron garnet single crystal film and has a composition formula that can be grown by the industrially advantageous CZ method. SOLUTION : The single crystal substrate for growing the bismuth-substituted rare earth iron garnet single crystal by liquid-phase epitaxial growth has the composition formula : CaxNby1Tiy2GazO12 (wherein x, y1, y2 and z satisfy the relations : 2.9


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