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METHOD FOR MANUFACTURING BISMUTH-SUBSTITUTED TYPE RARE EARTH IRON GARNET CRYSTAL FILM 发明申请

2023-09-27 3070 82K 0

专利信息

申请日期 2025-06-26 申请号 JP2010131849
公开(公告)号 JP2011256073A 公开(公告)日 2011-12-22
公开国别 JP 申请人省市代码 全国
申请人 SUMITOMO METAL MINING CO
简介 PROBLEM TO BE SOLVED : To provide a manufacturing method for a bismuth-substituted type rare earth iron garnet crystal film (RIG) which has a large content of Bi used for a Faraday rotator for an optical isolator of a high output laser system. SOLUTION : The manufacturing method is one for growing RIG on a nonmagnetic garnet substrate by a liquid epitaxial growth method and comprises making the lattice constance difference Δag between the RIG and the substrate at a growing temperature be at most 0.0205 Å, making the lattice constance difference Δar between the RIG and the substrate at room temperature be at most 0.003 Å, adjusting the relationship between the lattice constant difference (Δag-Δar) during growing and the lattice constant difference Δad where dislocation occurs at RIG so as to satisfy the numerical formula (1) : (Δag-Δar)<Δad=-0.0156b+0.0415, wherein b is the amount of Bi in the unit lattice of RIG, and setting the growing temperature Tg to be higher by at least 95 degrees C than the melting point Tm of a mixed oxide composed of PbO and Bi2O3 in a raw material melt used for growing RIG. COPYRIGHT : (C)2012, JPO&INPIT


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