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Low doped with a rare earth metal polyboride polyboride thermoelectric conversion material and its m 发明授权

2023-05-10 1260 419K 0

专利信息

申请日期 2025-09-10 申请号 JP2005326943
公开(公告)号 JP4840755B2 公开(公告)日 2011-12-21
公开国别 JP 申请人省市代码 全国
申请人 NAT INST FOR MATERIALS SCIENCE
简介 PROBLEM TO BE SOLVED : To provide a thermoelectric material consisting of rare earth polyboride of oxidation resistance providing excellent thermoelectric characteristics at a high temperature. SOLUTION : A polyboride which is represented by a formula REB26+XC4+YN1+Zand has a crystal structure belonging to rhombohedron or trigonal system is added with low boride represented by REBsand heated, so that the low boride is evenly dispersed and doped in the crystal to provide a thermoelectric conversion material consisting of rare earth polyboride having such crystal structure as belonging to rhombohedron or trigonal system, in which the low boride (REBs) is doped that is represented by a formula REB26+XC4+YN1+Z-t(REBs). Here, in the formula, X, Y, Z, and t are numerical numbers satisfying -10COPYRIGHT : (C)2007, JPO&INPIT


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