| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing a reliable semiconductor device suitable for miniaturizing. SOLUTION : This manufacturing method of the semiconductor device includes a process (a) that forms a plug made of metal or a metal compound in a first insulating layer arranged on a semiconductor substrate, a process (b) that forms a second insulating layer on the first one, a process (c) that forms an opening for exposing the surface of the plug on a base through the second insulating layer, a process (d) that forms an electrode layer made of a rare metal and a protection dielectric that covers the inner surface of the electrode layer on the inner surface of the opening and is made of a material having etching characteristics being different from those of the first and second insulating layers and the metal or metal compound, and a process (e) that removes the second insulating layer outside a cylinder by etching while the inner surface of the cylindrical electrode layer is covered with the dielectric film. |
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