| 简介 |
PROBLEM TO BE SOLVED : To provide a technology for reducing a variation among elements by removing a metal element remaining in a semiconductor film having a crystal structure after obtaining the film using the metal element for accelerating the crystallization of the semiconductor film. ?SOLUTION : As a process for forming a gettering site, plasma CVD is employed where monosilane and a rare gas element are used as material gas, the ratio (monosilane : rare gas) is controlled to 0.1 : 99.9-1 : 9, preferably to 1 : 99-5 : 95, RF power density is set at 0.0017-0.48 W/cm2, film deposition pressure is set at 1.333 Pa (0.01 Torr)-66.65 Pa (0.5 Torr), a film deposition temperature is set at 300-500°C, and after a semiconductor film having amorphous structure, typically an amorphous silicon film, containing a rare gas element at a high concentration of 1×1020-1×1021/cm3is formed, gettering is performed. ?COPYRIGHT : (C)2003, JPO ? |
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