| 简介 |
PROBLEM TO BE SOLVED : To improve the performance of a semiconductor device.
SOLUTION : The semiconductor device manufacturing method includes : forming a Hf-containing film 4 for a gate insulator film, an Al-containing film 5, and a mask layer 6 on a principal surface of a semiconductor substrate 1; thereafter selectively removing the mask layer 6 and the Al-containing film 5 in an nMIS formation region 1A which is an n-channel MISFET formation-scheduled region; then forming a rare earth-containing film 7 on the Hf-containing film 4 in the nMIS formation region 1A and on the mask layer 6 in a pMIS formation region 1B which is a p-channel MISFET formation-scheduled region; performing a heat treatment to cause the Hf-containing film 4 to react with the rare earth-containing film 7 in the nMIS formation region 1A, and to cause the Hf-containing film 4 to react with the Al-containing film 5 in the pMIS formation region 1B; thereafter removing an unreacted portion of the rare earth-containing film 7 and the mask layer 6; and then forming a metal gate electrode. The mask layer 6 has a laminate structure including a metal nitride film 6a made of titanium nitride or tantalum nitride, and a metal film 6b made of titanium or tantalum located on the metal nitride film.
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