| 申请日期 | 2025-08-21 | 申请号 | US12793051 |
| 公开（公告）号 | US20110298089A1 | 公开（公告）日 | 2011-12-08 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Rishikesh Krishnan; Michael P Chudzik; Siddarth A Krishnan | ||
| 简介 | An improved trench capacitor and method of fabrication are disclosed. The trench capacitor utilizes a rare-earth oxide layer to reduce depletion effects, thereby improving performance of the trench capacitor. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
