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FIELD EFFECT TRANSISTOR HAVING CHANNEL LAYER OF PEROVSKITE-TYPE COMPLEX OXIDE, MANUFACTURING METHOD 发明申请

2023-04-02 4620 417K 0

专利信息

申请日期 2025-07-10 申请号 JP2010112133
公开(公告)号 JP2011243632A 公开(公告)日 2011-12-01
公开国别 JP 申请人省市代码 全国
申请人 NAT INST ADVANCED IND TECH
简介 PROBLEM TO BE SOLVED : To provide a field effect transistor which changes resistance by injecting a highly concentrated charge into a channel using an electrical double layer method and also to provide a memory element using the field effect transistor as a switching element. SOLUTION : A single crystal film, which has a perovskite structure and comprises a composite oxide represented by chemical formula : A1-xBxNiO3, where A is one element selected from rare earth elements, B is at least one element of the rare earth elements except A, and x is an actual number satisfying 0≤x≤1), is used for a channel layer. COPYRIGHT : (C)2012, JPO&INPIT


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