| 简介 |
The present invention refers to gadolinium oxide insulating film relates to manufacturing method, more rapidly and to reduce a memory space a heterogeneous in gadolinium insulating properties (different kind) selected from rare earths and the high pressure is released characteristic same to by-particular light-emissive compounds relates insulating film, in addition such insulating layer providing a spindle non-position method for preparing a coating of relates to method. Gadolinium oxide of the present invention of thin film transistor insulating layer enables an advantageous insulating film or the like film used, in the present invention a vacuum manufacturing method which allows the presentation to the non-deposition fashion by using spin coating method applied to large display electronic layer.. |
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